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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4S641632F-TC50CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 200MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC55CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 183MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S643232E-TC50512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHzSamsung-ElectronicTSOP II860°C70°C102 K
K4S643232E-TC55512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHzSamsung-ElectronicTSOP II860°C70°C102 K
K4S643232F-TC50512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHzSamsung-ElectronicTSOP II860°C70°C101 K
K4S643232F-TC55512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHzSamsung-ElectronicTSOP II860°C70°C101 K
TC551001BFTL-85L131,072 word x 8 bit static RAM, 85nsToshibaTSOP320°C70°C584 K
TC551001BTRL-70L131,072 word x 8 bit static RAM, 70nsToshibaTSOP320°C70°C584 K
TC551001BTRL-85L131,072 word x 8 bit static RAM, 85nsToshibaTSOP320°C70°C584 K
TC572502ECTTRLine regulator controller, 2.5VMicrochip-Technology-Inc--5-40°C85°C462 K
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