| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FTD1011 | P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 28 K |
| FTD1012 | P-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 28 K |
| FTD1014 | P-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 28 K |
| FTD1014 | P-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 28 K |
| HGTD10N40F1 | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
| HGTD10N40F1S | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
| HGTD10N50F1S | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
| KTD1003 | NPN transistor for high current applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 291 K |
| KTD1028 | NPN transistor for high current applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 275 K |
| KTD1047 | NPN transistor for high power amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 285 K |
| STD10PF06 | P-CHANNEL 60V - 0.18 OHM - 10A TO-252 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
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