| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ICTE-10 | 10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| ICTE-5 | 5.00V; 160A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| ICTE-8 | 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| KM681000BLTE-7 | 128K x 8 bit CMOS static RAM, 70ns, low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| KM681000BLTE-7L | 128K x 8 bit CMOS static RAM, 70ns, low low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| KM681000BLTE-7L | 128K x 8 bit CMOS static RAM, 70ns, low low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| NX25F080A-3TE-R | 3 V, 8M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 28 | -20°C | 70°C | 378 K |
| NX25F080A-5TE-R | 5 V, 8M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 28 | -20°C | 70°C | 378 K |
| NX26F080A-3TE-R | 3 V, 8M-bit flash memory with 2-pin NXS interface | distributor | TSOP | 28 | -20°C | 70°C | 235 K |
| NX26F080A-5TE-R | 5 V, 8M-bit flash memory with 2-pin NXS interface | distributor | TSOP | 28 | -20°C | 70°C | 235 K |
| NX26F160A-5TE-R | 5 V, 16M-bit flash memory with 2-pin NXS interface | distributor | TSOP | 28 | -20°C | 70°C | 235 K |
| << [6] [7] [8] [9] [10] 11 [12] [13] [14] [15] |
|---|
