| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MBM29DL321TE12PBT | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 63 | -40°C | 85°C | 1 M |
| MBM29DL321TE12TN | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MBM29DL321TE12TR | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MBM29DL322TE12PBT | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 63 | -40°C | 85°C | 1 M |
| MBM29DL322TE12TN | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MBM29DL322TE12TR | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MBM29DL323TE12TN | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
| MTE125N20E | ISOTOP TMOS E-FET power field effect transistor | Motorola | SOT | 4 | -40°C | 150°C | 228 K |
| NM27C010TE120 | 1 Meg (128K x 8) High Perfomance CMOS EPROM | Fairchild-Semiconductor | TSOP | 32 | - | - | 117 K |
| NM27C010TE120 | 1 Meg (128K x 8) High Perfomance CMOS EPROM | Fairchild-Semiconductor | TSOP | 32 | - | - | 117 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
