Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MBM29DL323TE12PBT | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 63 | -40°C | 85°C | 1 M |
MBM29DL323TE12TR | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
MBM29DL324TE12PBT | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 63 | -40°C | 85°C | 1 M |
MBM29DL324TE12TN | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
MBM29DL324TE12TR | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
MBM29LV160TE12PBT | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | plastic FBGA | 48 | -40°C | 85°C | 653 K |
MBM29LV160TE12PCV | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | plastic CSOP | 48 | -40°C | 85°C | 653 K |
MBM29LV160TE12TN | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 653 K |
MBM29LV160TE12TR | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 653 K |
VTE1261 | GaAlAs infrared emitting diode. Irradiance(typ) 3.9 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 40 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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