| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LTE21025R | NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 51 K |
| NTE2102 | Integrated circuit. NMOS, 1K static RAM (SRAM), 35ns. | distributor | DIP | 16 | 0°C | 70°C | 28 K |
| NTE21128 | Integrated circuit. NMOS, 128K (16K x 8) UV EPROM. | distributor | DIP | 28 | 0°C | 70°C | 37 K |
| NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | distributor | DIP | 18 | 0°C | 70°C | 29 K |
| NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | distributor | DIP | 18 | 0°C | 70°C | 29 K |
| NTE21256 | 262, 144-bit dynamic random access memory (DRAM). | distributor | DIP | 16 | 0°C | 70°C | 42 K |
| NTE215 | Silicon NPN transistor. Darlington driver. | distributor | TO3P | 3 | 0°C | 150°C | 22 K |
| NTE215 | Silicon NPN transistor. Darlington driver. | distributor | TO3P | 3 | 0°C | 150°C | 22 K |
| NTE216 | Silicon NPN transistor. High speed switch, core driver. | distributor | - | 3 | 0°C | 150°C | 19 K |
| NTE218 | Silicon PNP transistor. Audio power output. | distributor | TO3 | 2 | -65°C | 200°C | 23 K |
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