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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
NTE5844Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 20A.distributorDO42-65°C175°C24 K
NTE5845Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 20A.distributorDO42-65°C175°C24 K
NTE5892Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A.distributorDO42-65°C175°C24 K
NTE5896Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A.distributorDO42-65°C175°C24 K
NTE5896Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A.distributorDO42-65°C175°C24 K
NTE5897Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A.distributorDO42-65°C175°C24 K
NTE5898Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.distributorDO42-65°C175°C24 K
NTE5899Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.distributorDO42-65°C175°C24 K
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