Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MBM29DL324TE90PBT | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 63 | -40°C | 85°C | 1 M |
MBM29DL324TE90TR | Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 1 M |
MBM29LV160TE90PBT | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | plastic FBGA | 48 | -40°C | 85°C | 653 K |
MBM29LV160TE90PCV | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | plastic CSOP | 48 | -40°C | 85°C | 653 K |
MBM29LV160TE90TR | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | plastic TSOP | 48 | -40°C | 85°C | 653 K |
MBM29PL3200TE90PBT | Page mode flash memory CMOS 32M (2M x 16/1 x 32) bit | Fujitsu-Microelectronis | plastic FBGA | 84 | -40°C | 85°C | 670 K |
MBM29PL3200TE90PFV | Page mode flash memory CMOS 32M (2M x 16/1 x 32) bit | Fujitsu-Microelectronis | plastic SSOP | 90 | -40°C | 85°C | 670 K |
NTE90 | Silicon complementary NPN transistor. General purpose high gain amplifier. | distributor | - | 3 | 0°C | 150°C | 19 K |
NTE90 | Silicon complementary NPN transistor. General purpose high gain amplifier. | distributor | - | 3 | 0°C | 150°C | 19 K |
NTE91 | Silicon complementary PNP transistor. General purpose high gain amplifier. | distributor | - | 3 | 0°C | 150°C | 19 K |
NTE91 | Silicon complementary PNP transistor. General purpose high gain amplifier. | distributor | - | 3 | 0°C | 150°C | 19 K |
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