| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ATF-10100-GP3 | 0.5-12GHz low noise gallium arsenide FET | distributor | - | - | - | - | 51 K |
| ATF-10136-STR | 0.5-12GHz low noise gallium arsenide FET | distributor | - | 4 | - | - | 46 K |
| ATF-10136-TR1 | 0.5-12GHz low noise gallium arsenide FET | distributor | - | 4 | - | - | 46 K |
| ATF-10236-STR | 0.5-12GHz low noise gallium arsenide FET | distributor | - | 4 | - | - | 47 K |
| ATF-10236-TR1 | 0.5-12GHz low noise gallium arsenide FET | distributor | - | 4 | - | - | 47 K |
| ATF-10736-STR | 0.5-12GHz general purpose gallium arsenide FET | distributor | - | 4 | - | - | 49 K |
| ATF-10736-TR1 | 0.5-12GHz general purpose gallium arsenide FET | distributor | - | 4 | - | - | 49 K |
| ATF-13100-GP3 | 2-18GHz low noise gallium arsenide FET | distributor | - | - | - | - | 43 K |
| CM15TF-12H | 15 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -40°C | 150°C | 50 K |
| CM20TF-12H | 20 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -40°C | 150°C | 50 K |
| [1] 2 [3] [4] |
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