| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM68257CLTG-15 | 32Kx8 bit high speed static RAM (5V operating), 15ns | Samsung-Electronic | TSOP I | 28 | 0°C | 70°C | 190 K |
| KM68257CLTG-20 | 32Kx8 bit high speed static RAM (5V operating), 20ns | Samsung-Electronic | TSOP I | 28 | 0°C | 70°C | 190 K |
| KM68257CTG-12 | 32Kx8 bit high speed static RAM (5V operating), 12ns | Samsung-Electronic | TSOP I | 28 | 0°C | 70°C | 190 K |
| KM68257CTG-15 | 32Kx8 bit high speed static RAM (5V operating), 15ns | Samsung-Electronic | TSOP I | 28 | 0°C | 70°C | 190 K |
| KM68257CTG-20 | 32Kx8 bit high speed static RAM (5V operating), 20ns | Samsung-Electronic | TSOP I | 28 | 0°C | 70°C | 190 K |
| MT4C4M4E8TG-5 | 4Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 50ns | distributor | TSOP | 24 | 0°C | 70°C | 291 K |
| MT4C4M4E8TG-6 | 4Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 60ns | distributor | TSOP | 24 | 0°C | 70°C | 291 K |
| MT4C4M4E9TG-5 | 4Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 50ns | distributor | TSOP | 24 | 0°C | 70°C | 291 K |
| MT4C4M4E9TG-6 | 4Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 60ns | distributor | TSOP | 24 | 0°C | 70°C | 291 K |
| MT4LC4M4E9TG-6 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns | distributor | TSOP | 24 | 0°C | 70°C | 291 K |
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