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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTH12N40E110A, 12A, 400V and 500V N-Channel IGBTsIntersil-Corporation----38 K
HGTH12N50C110A, 12A, 400V and 500V N-Channel IGBTsIntersil-Corporation----38 K
HGTH12N50E110A, 12A, 400V and 500V N-Channel IGBTsIntersil-Corporation----38 K
HGTP10N50E1HGTH12N40C110A, 12A, 400V and 500V N-Channel IGBTsIntersil-Corporation----38 K
STH10NA50FIN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----243 K
STH12NA60FIN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----243 K
STH15NA50FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----243 K
STH16NA40FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----73 K
STTH12003TVHIGH FREQUENCY SECONDARY RECTIFIERSGS-Thomson-Microelectronics----57 K
STTH16003TVHIGH FREQUENCY SECONDARY RECTIFIERSGS-Thomson-Microelectronics----55 K
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