| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXTH10P50 | 500V standard power MOSFET | distributor | - | 3 | -55°C | 150°C | 123 K |
| IXTH10P60 | 600V standard power MOSFET | distributor | - | 3 | -55°C | 150°C | 70 K |
| IXTH11P50 | 500V standard power MOSFET | distributor | - | 3 | -55°C | 150°C | 123 K |
| IXTH14N80 | 800V MegaMOS FET | distributor | - | 3 | -55°C | 150°C | 80 K |
| IXTH16P20 | 200V standard power MOSFET | distributor | - | 3 | -55°C | 150°C | 79 K |
| IXTH1N100 | 1000V high voltage MOSFET | distributor | - | 3 | -55°C | 150°C | 73 K |
| MMBTH10 | 30V; 50mA NPN surface mount VHF/UHF transistor. Ideal for mixer and AF amplifier applications with collector currents in the 100uA - 30mA range | distributor | - | 3 | -55°C | 150°C | 55 K |
| MMBTH10LT1 | 25 V, VHF/UHF transistor | distributor | - | 3 | -55°C | 150°C | 138 K |
| STH15NB50FI | Transistor polarity N Channel Current Id cont. 10.6 A Voltage isolation 4 kV Pitch lead 5.45 mm Power Ptot 80 W Voltage Vds max 500 V Resistance Rds on 0.36 R Current Id cont @ 100 degree C 6.6 A | SGS-Thomson-Microelectronics | - | - | - | - | 110 K |
| STH18NB40FI | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 12.4 A Current Idm pulse 73.6 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 400 V Resistance Rds on 0.3 R | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
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