| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| TIP2955 | PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP31C | NPN, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP32C | PNP, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35A | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35B | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP35C | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP36A | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP36B | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP36C | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP41C | NPN, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, PD = 65W. | distributor | - | 3 | -65°C | 150°C | 47 K |
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