| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HTIP122 | 5V 5A NPN epiataxial planar transistor for use in general purpose amplifier and low-speed swithcing applications | distributor | - | 3 | - | - | 39 K |
| HTIP125 | 5V 5A PNP epiataxial planar transistor for medium power linear and switching applications | distributor | - | 3 | - | - | 34 K |
| HTIP127 | 5V 5A PNP epiataxial planar transistor for use in general purpose amplifier and low-speed switching applications | distributor | - | 3 | - | - | 41 K |
| HTIP127 | 5V 5A PNP epiataxial planar transistor for use in general purpose amplifier and low-speed switching applications | distributor | - | 3 | - | - | 41 K |
| TIP120 | 60 V, NPN plastic power transistor | distributor | - | 3 | -65°C | 150°C | 28 K |
| TIP120 | NPN Epitaxial Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 45 K |
| TIP121 | NPN Epitaxial Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 45 K |
| TIP121 | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP122 | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TIP127 | PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. | distributor | - | 3 | -65°C | 150°C | 47 K |
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