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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
TIP140NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--24 K
TIP140T60V 10A darlington coplementary silicon power transistordistributor-4-55°C150°C204 K
TIP141NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--24 K
TIP141T80V 10A darlington coplementary silicon power transistordistributor-4-55°C150°C204 K
TIP142NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--24 K
TIP142T100V 10A darlington coplementary silicon power transistordistributor-4-55°C150°C204 K
TIP14560V 10A darlington coplementary silicon power transistordistributor-3-65°C150°C204 K
TIP145T60V 10A darlington coplementary silicon power transistordistributor-4-55°C150°C204 K
TIP146T80V 10A darlington coplementary silicon power transistordistributor-4-55°C150°C204 K
TIP147T100V 10A darlington coplementary silicon power transistordistributor-4-55°C150°C204 K
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