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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HTL145500V 300mA NPN epiataxial planar transistor for high voltage low power switching applicationsdistributor-3--35 K
HTL194400V 300mA PNP epiataxial planar transistor for high voltage low power switching applicationsdistributor-3--35 K
HTL195500V 300mA PNP epiataxial planar transistor for high voltage low power switching applicationsdistributor-3--35 K
K4S641632F-TL1HCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL1LCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL1LCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S643232C-TL10512K x 32bit x 4 banks synchronous DRAM LVTTL, 100MHzSamsung-ElectronicTSOP II860°C70°C1 M
TL1500MRated repetitive off-state voltage:140 ,surface mount thyristor surge protective devicedistributor-2--46 K
TL1500MRated repetitive off-state voltage:140 ,surface mount thyristor surge protective devicedistributor-2--46 K
TL1800MRated repetitive off-state voltage:160 ,surface mount thyristor surge protective devicedistributor-2--46 K
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