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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M4V64S20ATP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
M5M4V64S20ATP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
M5M4V64S30ATP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
M5M4V64S30ATP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
M5M4V64S40ATP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
M5M5V416BTP-10H4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C110 K
M5M5V416BTP-10HI4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP44-40°C85°C110 K
M5M5V416BTP-10HW4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP44-20°C85°C110 K
M5M5V416BTP-10L4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C110 K
M5M5V416BTP-10LW4194304-bit (262144-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP44-20°C85°C110 K
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