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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M2V64S20BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S20BTP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S30BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S30BTP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S40BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S40BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S40BTP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M5M4V16169DTP-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V64S40ATP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
M5M5V408BTP-10L4194304-bit (524288-word by 8-bit) CMOS static SRAMMitsubishi-Electric-Corporation-Semiconductor-Group-320°C70°C162 K
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