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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M2S12D20TP-10512M double data rate SDRAM, 128M x 4 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D20TP-10L512M double data rate SDRAM, 128M x 4 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D30TP-10512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D30TP-10512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D30TP-10L512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D30TP-10L512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S56D20ATP-10265M double data rate SDRAM, 64M x 4 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
M2S56D20ATP-10L265M double data rate SDRAM, 64M x 4 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
M2S56D30ATP-10265M double data rate SDRAM, 32M x 8 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
TP-108350-1125 MHz, RF transformerM-A-COM---manufacturer-of-RF-6-55°C85°C110 K
TP-108350-1125 MHz, RF transformerM-A-COM---manufacturer-of-RF-6-55°C85°C110 K
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