| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP12N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 115 K |
| HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 394 K |
| HGTP1N120CN | 6.2A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 77 K |
| HGTP1N120CND | 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 80 K |
| MTP1302 | HDTMOS E-FET high density power FET | Motorola | - | 4 | -55°C | 150°C | 166 K |
| MTP1306 | HDTMOS E-FET high density power FET | Motorola | - | 4 | -55°C | 150°C | 171 K |
| MTP1306 | HDTMOS E-FET high density power FET | Motorola | - | 4 | -55°C | 150°C | 171 K |
| MTP1N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
| MTP1N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 232 K |
| MTP1N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
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