| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP12N60A4 | 600V, SMPS Series N-Channel IGBTs | Fairchild-Semiconductor | - | - | - | - | 229 K |
| HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 173 K |
| HGTP12N60B3 | 27A, 600V, UFS Series N-Channel IGBTs | Fairchild-Semiconductor | - | - | - | - | -- |
| HGTP12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 205 K |
| HGTP12N60C3 | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 131 K |
| HGTP12N60C3D | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Fairchild-Semiconductor | - | - | - | - | 154 K |
| OR3TP12-6BA352I | ORCA feild-programmable system chip embedded master/target PCI interface. 3.3 V. 32-/64-bit, 33/66 MHz PCI bus interface. Array size 14 x 18. | distributor | PBGA | 352 | -40°C | 85°C | 2 M |
| STP12NK30Z | N-CHANNEL 300V 0.36 OHM 9A TO-220 ZENER-PROTECTED SUPER-MESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 283 K |
| STP12NM50FD | N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 649 K |
| VTP1232 | Process photodiodes | distributor | - | 2 | -40°C | 100°C | 24 K |
| [1] [2] 3 [4] |
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