Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
HGTP20N35G3VL | 350V, 20A Ignition IGBT | Intersil-Corporation | - | - | - | - | 106 K |
HGTP20N60B3 | 40A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 138 K |
STP20N10LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 203 K |
STP22NE10L | N-CHANNEL 55V - 0.07 OHM - 22A STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
STP2N60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
STP2N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
STP2N80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
STP2N80FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
STP2NA50 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
STP2NA50FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
[1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
---|