| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP20N60A4 | 600V, SMPS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 354 K |
| HGTP20N60A4 | 600V, SMPS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 354 K |
| HGTP20N60C3 | 45A, 600V, UFS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
| HGTP2N120BN | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTP2N120BND | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 89 K |
| HGTP2N120CND | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 92 K |
| MTP2955V | P-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 393 K |
| MTP2N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 219 K |
| MTP2P50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 230 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
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