Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGTP20N35G3VL | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs | Fairchild-Semiconductor | - | - | - | - | 209 K |
HGTP20N60A4 | 600V, SMPS Series N-Channel IGBTs | Fairchild-Semiconductor | - | - | - | - | 140 K |
HGTP20N60A4 | 600V, SMPS Series N-Channel IGBTs | Fairchild-Semiconductor | - | - | - | - | 140 K |
HGTP20N60B3 | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 138 K |
HGTP20N60C3R | TRANSISTOR IGBT TO-262 | Fairchild-Semiconductor | - | - | - | - | 107 K |
HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 123 K |
MTP2N85 | N-channel power MOSFET, 850V, 2A | distributor | - | 3 | -65°C | 150°C | 22 K |
STP20NM50 | N-CHANNEL 500V - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 532 K |
STP20NM50 | N-CHANNEL 500V - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 532 K |
TP2640LG | 400V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 457 K |
TP2640ND | 400V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 457 K |
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