| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP5N120BN | 21A, 1200V, NPT Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 82 K |
| HGTP5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 89 K |
| HGTP5N120CN | 25A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 80 K |
| HGTP5N120CND | 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
| MTP50N06EL | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 232 K |
| MTP55N06Z | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 143 K |
| MTP5N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 258 K |
| STP5NA80FP | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STP5NB90 | N-CHANNEL 900V - 2.3 OHM - 5A - TO-220/TO-220FP | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
| STP5NB90FP | N-CHANNEL 900V - 2.3 OHM - 5A - TO-220/TO-220FP | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
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