| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S643232E-TP60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | -45°C | 85°C | 100 K |
| K4S643232F-TP60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | -40°C | 85°C | 99 K |
| MTP60N05HDL | HDTMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 166 K |
| STP60NE10 | N-CHANNEL 100V - 0.016 OHM - 60A TO-220/TO-220FP STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 108 K |
| STP60NE10FP | N-CHANNEL 100V - 0.016 OHM - 60A TO-220/TO-220FP STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 108 K |
| STP60NF06 | N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 330 K |
| STP60NF06L | N-CHANNEL 60V - 0.014 OHM - 60A D2PAK/TO-220 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 472 K |
| STP60NF06L | N-CHANNEL 60V - 0.014 OHM - 60A D2PAK/TO-220 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 472 K |
| TP60P | Silicon photovoltaic cell | Infineon-formely-Siemens | - | 2 | -40°C | 80°C | 162 K |
| VTP6060 | Process photodiodes | distributor | - | 2 | -40°C | 110°C | 30 K |
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