| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
| HGTP7N60B3D | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 94 K |
| K6T0808C1D-TP70 | 70ns, 32Kx8 bit low power CMOS static RAM | Samsung-Electronic | TSOP1F | 28 | -40°C | 85°C | 170 K |
| MTP75N03HDL | HDTMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 235 K |
| MTP75N06HD | HDTMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 275 K |
| MTP7N20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 223 K |
| VTP7110 | Process photodiodes | distributor | - | 2 | -40°C | 110°C | 26 K |
| VTP7210 | Process photodiode. Isc = 7 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 85°C | 26 K |
| VTP7840 | Process photodiode. Isc = 70 microA(typ), Voc = 325 mV at H = 100 fc, 2850 K. | distributor | Lensed sidelooker | 2 | -40°C | 85°C | 26 K |
| [1] [2] 3 [4] [5] |
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