Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
STP80N06-10 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
STP80NE06-10 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
STP80NF10 | N-CHANNEL 100V - 0.014 OHM - 80A TO-220 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 48 K |
STP80NF55L-06 | N-CHANNEL 55V - 0.005 OHM - 80A TO220 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
STP8NA50 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 205 K |
STP8NA50FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 205 K |
STP8NC50 | N-CHANNEL 500V - 0.7 OHM - 8A - TO-220 POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
TP801C04 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 71 K |
TP801C06 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 74 K |
TP802C04 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 70 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
---|