Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTP8N06E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 212 K |
MTP8N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 158 K |
TP802C06 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 76 K |
TP802C09 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 74 K |
TP805C04 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 71 K |
TP80C251TB | High-performance CHMOS microcontroller. 1 Kbytes RAM, without ROM, 24 MHz | Intel-Corporation | PDIP | 40 | -40°C | 85°C | 238 K |
TP80C251TQ | High-performance CHMOS microcontroller. 512 bytes RAM, without ROM, 24 MHz | Intel-Corporation | PDIP | 40 | -40°C | 85°C | 238 K |
TP83C251TB | High-performance CHMOS microcontroller. 1 Kbytes RAM, 16 Kbytes ROM, 24 MHz | Intel-Corporation | PDIP | 40 | -40°C | 85°C | 238 K |
TP83C251TP | High-performance CHMOS microcontroller. 512 bytes RAM, 8 Kbytes ROM, 24 MHz | Intel-Corporation | PDIP | 40 | -40°C | 85°C | 238 K |
TP83C251TQ | High-performance CHMOS microcontroller. 512 bytes RAM, 16 Kbytes ROM, 24 MHz | Intel-Corporation | PDIP | 40 | -40°C | 85°C | 238 K |
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