| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ACTS630MS | Radiation Hardened EDAC | Intersil-Corporation | - | - | - | - | 489 K |
| BTS610L1 | Smart 2-channel highside power switch | Infineon-formely-Siemens | - | 7 | -40°C | 150°C | 137 K |
| BTS611L1 | Smart 2-channel highside power switch | Infineon-formely-Siemens | - | 7 | -40°C | 150°C | 191 K |
| BTS612N1 | Smart 2-channel highside power switch | Infineon-formely-Siemens | - | 7 | -40°C | 150°C | 183 K |
| BTS620L1 | Smart 2-channel highside power switch | Infineon-formely-Siemens | - | 7 | -40°C | 150°C | 138 K |
| BTS621L1 | Smart 2-channel highside power switch | Infineon-formely-Siemens | - | 7 | -40°C | 150°C | 191 K |
| HCTS646MS | Radiation Hardened Octal Bus Transceiver/Register, Three-State | Intersil-Corporation | - | - | - | - | 147 K |
| STS6DNF30L | DUAL N-CHANNEL 30V - 0.022 OHM - 6A SO-8 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
| TS652 | DIFFERENTIAL VARIABLE GAIN AMPLIFIER | SGS-Thomson-Microelectronics | - | - | - | - | 74 K |
| TS68230 | HCMOS PARALLEL INTERFACE/TIMER | SGS-Thomson-Microelectronics | - | - | - | - | 523 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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