| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTW10N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 192 K |
| MTW14N50E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 205 K |
| MTW16N40E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 217 K |
| STW10NC70Z | N-CHANNEL 700V 0.58OHM 10.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 249 K |
| STW10NK60Z | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
| STW10NK80Z | N-CHANNEL 800V - 0.78 OHM - 9A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 458 K |
| STW12NB60 | N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 250 K |
| STW14NC50 | Power dissipation 190 W Transistor polarity N Channel Current Id cont. 14 A Current Idm pulse 56 A Pitch lead 5.45 mm Voltage Vds max 500 V Resistance Rds on 0.4 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STW16NA60 | N-CHANNEL 600V - 0.33OHM - 16A FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 75 K |
| STW18NB40 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
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