| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MX29LV400TXEC-55R | Access time: 55ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | 0°C | 70°C | 1 M |
| MX29LV400TXEC-70 | Access time: 70ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | 0°C | 70°C | 1 M |
| MX29LV400TXEC-90 | Access time: 90ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | 0°C | 70°C | 1 M |
| MX29LV400TXEI-70 | Access time: 70ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | -40°C | 85°C | 1 M |
| MX29LV400TXEI-90 | Access time: 90ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | -40°C | 85°C | 1 M |
| MX29LV800TXEC-70 | Access time: 70ns; 8M-bit (1M x 8/512K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | 0°C | 70°C | 1 M |
| MX29LV800TXEC-90 | Access time: 90ns; 8M-bit (1M x 8/512K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | 0°C | 70°C | 1 M |
| MX29LV800TXEI-70 | Access time: 70ns; 8M-bit (1M x 8/512K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | -40°C | 85°C | 1 M |
| MX29LV800TXEI-90 | Access time: 90ns; 8M-bit (1M x 8/512K x 16) CMOS single voltage 3V only flash memory | distributor | CSP | 48 | -40°C | 85°C | 1 M |
| W4TXE0X-0D00 | Diameter: 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
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