| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DU1215S | 2-175 MHz, 15W, 12V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 202 K |
| DU1230S | 2-175 MHz, 30W, 12V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 195 K |
| DU1260T | 2-175 MHz, 60W, 12V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | 6 | - | - | 197 K |
| IRFU120N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A | International-Rectifier | - | 3 | -55°C | 175°C | 142 K |
| IRFU120N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A | International-Rectifier | - | 3 | -55°C | 175°C | 142 K |
| IRFU13N15D | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A | International-Rectifier | - | 3 | -55°C | 175°C | 128 K |
| IRFU13N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A | International-Rectifier | - | 3 | -55°C | 175°C | 181 K |
| IRFU13N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A | International-Rectifier | - | 3 | -55°C | 175°C | 181 K |
| IRU1010-18CD | 1A low dropout positive fixed 1.8V regulator | International-Rectifier | - | 2 | 0°C | 125°C | 76 K |
| IRU1010-18CY | 1A low dropout positive fixed 1.8V regulator | International-Rectifier | - | 3 | 0°C | 125°C | 76 K |
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