| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GBU10A | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified output current at Tc=100degC 10.0 A. | distributor | GBU | 4 | -50°C | 150°C | 72 K |
| GBU10B | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified output current at Tc=100degC 10.0 A. | distributor | GBU | 4 | -50°C | 150°C | 72 K |
| GBU10D | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified output current at Tc=100degC 10.0 A. | distributor | GBU | 4 | -50°C | 150°C | 72 K |
| GBU10J | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified output current at Tc=100degC 10.0 A. | distributor | GBU | 4 | -50°C | 150°C | 72 K |
| GBU10K | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified output current at Tc=100degC 10.0 A. | distributor | GBU | 4 | -50°C | 150°C | 72 K |
| K6T4008U1C-MB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-MB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-MB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-TB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-TB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
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