| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GBU10005 | 50V, 10A glass passivated bridge rectifier | distributor | GBU | 4 | -55°C | 150°C | 51 K |
| GBU1001 | 10V, 10A glass passivated bridge rectifier | distributor | GBU | 4 | -55°C | 150°C | 51 K |
| GBU1001 | 10V, 10A glass passivated bridge rectifier | distributor | GBU | 4 | -55°C | 150°C | 51 K |
| GBU1002 | 200V, 10A glass passivated bridge rectifier | distributor | GBU | 4 | -55°C | 150°C | 51 K |
| GBU1004 | 400V, 10A glass passivated bridge rectifier | distributor | GBU | 4 | -55°C | 150°C | 51 K |
| K6T4008U1C-GF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-GF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-TB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-YB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008U1C-YB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
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