Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
K6T4008U1C-GB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-GB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-MB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-MB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-MB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-TB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-TB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-VB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-VB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
K6T4008U1C-VB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
1 [2] [3] [4] |
---|