| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M27C202RV-12 | 131072-word by 16-bit CMOS erasable and electrically reprogrammable ROM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 40 | -10°C | 80°C | 586 K |
| M5M27C202RV-12 | 131072-word by 16-bit CMOS erasable and electrically reprogrammable ROM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 40 | -10°C | 80°C | 586 K |
| M5M5256CRV-12VLL | 262144-bit (32768 x 8-bit) CMOS static RAM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | 0°C | 70°C | 472 K |
| M5M5256CRV-12VLL | 262144-bit (32768 x 8-bit) CMOS static RAM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | 0°C | 70°C | 472 K |
| M5M5256CRV-12VXL | 262144-bit (32768 x 8-bit) CMOS static RAM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | 0°C | 70°C | 472 K |
| WEDPNF8M721V-1212BC | 125MHz SDRAM/120ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | 0°C | 70°C | 1 M |
| WEDPNF8M721V-1215BC | 125MHz SDRAM/150ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | 0°C | 70°C | 1 M |
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