| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DA28F016SV-120 | 16-Mbit (1Mbit x 16, 2Mbit x 8) flashFile memory. Access speed 120 ns, Vcc=3.3V, 50pF load, 1.5V I/O levels | Intel-Corporation | SSOP | 56 | 0°C | 70°C | 635 K |
| E28F016SV-120 | 16-Mbit (1Mbit x 16, 2Mbit x 8) flashFile memory. Access speed 120 ns, Vcc=3.3V, 50pF load, 1.5V I/O levels | Intel-Corporation | TSOP | 56 | 0°C | 70°C | 635 K |
| M5M29FB800RV-12 | CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 151 K |
| M5M29FT800RV-12 | CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 151 K |
| M5M51008BRV-12VL | 1048576-bit (131072-word by 8-bit) CMOS static SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | -40°C | 85°C | 61 K |
| M5M5256DRV-12VLL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | -40°C | 85°C | 63 K |
| M5M5256DRV-12VLL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | -40°C | 85°C | 63 K |
| M5M5256DRV-12VLL-I | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 28 | -40°C | 85°C | 44 K |
| M5M5256DRV-12VXL | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | -40°C | 85°C | 63 K |
| M5M5256DRV-12VXL-I | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 28 | -40°C | 85°C | 44 K |
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