| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AQV101A | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 40V, load current 700 mA. Tube packing style. | distributor | - | 6 | -40°C | 85°C | 60 K |
| AQV101AZ | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 40V, load current 700 mA. Tape and reel packing style. picked from the 4/5/6-pin side. | distributor | - | 6 | -40°C | 85°C | 60 K |
| AQV102 | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 60V, load current 600 mA. Tube packing style. | distributor | - | 6 | -40°C | 85°C | 60 K |
| AQV102A | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 60V, load current 600 mA. Tube packing style. | distributor | - | 6 | -40°C | 85°C | 60 K |
| AQV102AX | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 60V, load current 600 mA. Tape and reel packing style, picked from the 1/2/3-pin side. | distributor | - | 6 | -40°C | 85°C | 60 K |
| KM416V1000CJ-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
| KM416V1000CJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
| KM416V1000CJL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
| KM416V1000CJL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
| KM416V1000CT-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 767 K |
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