| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BYV10-20 | Schottky barrier diode. Repetitive peak reverse voltage 20 V. | Philips-Semiconductors | SOD81 | 2 | 0°C | 125°C | 26 K |
| BYV10-30 | Schottky barrier diode. Repetitive peak reverse voltage 30 V. | Philips-Semiconductors | SOD81 | 2 | 0°C | 125°C | 26 K |
| BYV10-30 | Schottky barrier diode. Repetitive peak reverse voltage 30 V. | Philips-Semiconductors | SOD81 | 2 | 0°C | 125°C | 26 K |
| BYV10-40 | Schottky barrier diode. Repetitive peak reverse voltage 40 V. | Philips-Semiconductors | SOD81 | 2 | 0°C | 125°C | 26 K |
| KM416V1004AJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416V1004AJ-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416V1004AJ-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416V1004AJ-L7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416V1004AT-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
| KM416V1004AT-F7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
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