| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL22V10B-25LJ | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-25LP | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10B-25LP | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10B-25QJ | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-25QP | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10C-7LPI | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 386 K |
| GAL22V10D-25LJ | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10D-25LP | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10D-25QJ | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10D-7LPI | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 386 K |
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