| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL22V10B-20LJI | High Performance E2CMOS PLD, 20ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
| GAL22V10B-20LPI | High Performance E2CMOS PLD, 20ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 386 K |
| GAL22V10B-25LJI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
| GAL22V10B-25LPI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 386 K |
| GAL22V10D-20LJI | High Performance E2CMOS PLD, 20ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
| GAL22V10D-20LPI | High Performance E2CMOS PLD, 20ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 386 K |
| GAL22V10D-25LJI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
| TC55V1001AFT-10 | 131,072-word by 8 bit static RAM, access time 100ns | Toshiba | TSOP | 32 | 0°C | 70°C | 562 K |
| TC55V1001AFT-10L | 131,072-word by 8 bit static RAM, access time 100ns | Toshiba | TSOP | 32 | 0°C | 70°C | 562 K |
| TC55V1001ATR-10 | 131,072-word by 8 bit static RAM, access time 100ns | Toshiba | TSOP | 32 | 0°C | 70°C | 562 K |
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