| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416V1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJ-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJ-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CTL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V1004CTL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V1004CTL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| PEEL22CV10AP-10 | 10ns CMOS programmable electrically erasable logic device | distributor | PDIP | 20 | 0°C | 70°C | 247 K |
| PEEL22CV10AP-15 | 15ns CMOS programmable electrically erasable logic device | distributor | PDIP | 20 | 0°C | 70°C | 247 K |
| PEEL22CV10AP-7 | 7ns CMOS programmable electrically erasable logic device | distributor | PDIP | 20 | 0°C | 70°C | 247 K |
| << [94] [95] [96] [97] [98] 99 [100] [101] [102] [103] [104] >> |
|---|
