Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BYV133F-35 | 35 V, schottky barrier rectifier diode | Philips-Semiconductors | SOT | 3 | - | - | 31 K |
BYV133F-40 | 40 V, schottky barrier rectifier diode | Philips-Semiconductors | SOT | 3 | - | - | 31 K |
BYV133F-45 | 45 V, schottky barrier rectifier diode | Philips-Semiconductors | SOT | 3 | - | - | 31 K |
BYV133F-45 | 45 V, schottky barrier rectifier diode | Philips-Semiconductors | SOT | 3 | - | - | 31 K |
EDI9LC644V1312BC | SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM | distributor | - | 153 | - | - | 1 M |
WED9LC6416V1310BC | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
WED9LC6416V1310BI | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
WED9LC6416V1312BC | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
WED9LC6416V1312BC | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
WED9LC6416V1312BI | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
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