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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M4V16169DRT-816M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16G50DFP-1016M synchronous graphics RAMMitsubishi-Electric-Corporation-Semiconductor-GroupQFP1000°C70°C167 K
M5M4V16G50DFP-1216M synchronous graphics RAMMitsubishi-Electric-Corporation-Semiconductor-GroupQFP1000°C70°C167 K
M5M4V16G50DFP-816M synchronous graphics RAMMitsubishi-Electric-Corporation-Semiconductor-GroupQFP1000°C70°C167 K
MX29LV161BMC-70Access time: 70ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage 3V only flash memorydistributorSOP440°C70°C995 K
MX29LV161BMC-90Access time: 90ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage 3V only flash memorydistributorSOP440°C70°C995 K
MX29LV161TMC-70Access time: 70ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage 3V only flash memorydistributorSOP440°C70°C995 K
MX29LV161TMC-90Access time: 90ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage 3V only flash memorydistributorSOP440°C70°C995 K
MX29LV161TTC-70Access time: 70ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage 3V only flash memorydistributorTSOP480°C70°C995 K
MX29LV161TTC-70Access time: 70ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage 3V only flash memorydistributorTSOP480°C70°C995 K
MX29LV161TTC-90Access time: 90ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage 3V only flash memorydistributorTSOP480°C70°C995 K
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