Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BYV2100 | Fast soft-recovery controlled avalanche rectifier. Repetitive peak reverse voltage 100 V. | Philips-Semiconductors | SOD57 | 2 | -65°C | 175°C | 72 K |
KM48V2100BK-5 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48V2100BK-6 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48V2100BK-7 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48V2100BKL-5 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48V2100BKL-6 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48V2100BKL-7 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48V2100BS-5 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 79 K |
KM48V2100BSL-6 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 79 K |
KM48V2100BSL-7 | 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 79 K |
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