| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1V250 | Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 390 V @ 1mA DC test current. | distributor | - | 2 | -40°C | 85°C | 27 K |
| 2V250 | Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. | distributor | - | 2 | -40°C | 85°C | 27 K |
| AQV254RAX | PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - with LED display. Output rating: load voltage 400 V, load current 150 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3/-pin side. | distributor | - | 6 | -40°C | 85°C | 98 K |
| AQV254RAZ | PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - with LED display. Output rating: load voltage 400 V, load current 150 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6/-pin side. | distributor | - | 6 | -40°C | 85°C | 98 K |
| AQV257M | PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Through hole terminal, tube packing style. | distributor | - | 6 | -40°C | 85°C | 47 K |
| KM416V256DJ-5 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 83 K |
| KM416V256DLT-5 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416V256DLT-6 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416V256DLT-7 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416V256DT-5 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
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