| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 27LV256-20/L | 256K (32Kx8) low-voltage CMOS EPROM | Microchip-Technology-Inc- | PLCC32 | 32 | 0°C | 70°C | 64 K |
| 27LV256-20/P | 256K (32Kx8) low-voltage CMOS EPROM | Microchip-Technology-Inc- | - | 28 | 0°C | 70°C | 64 K |
| IDT71V256SB12PZ | 3.3V CMOS fast SRAM with 2.5V compatible inputs 256K (32K x 8-bit) | Integrated-Device-Technology-Inc- | TSOP | 28 | 0°C | 70°C | 66 K |
| IDT71V256SB12Y | 3.3V CMOS fast SRAM with 2.5V compatible inputs 256K (32K x 8-bit) | Integrated-Device-Technology-Inc- | SOJ | 28 | 0°C | 70°C | 66 K |
| IDT71V256SB15Y | 3.3V CMOS fast SRAM with 2.5V compatible inputs 256K (32K x 8-bit) | Integrated-Device-Technology-Inc- | SOJ | 28 | 0°C | 70°C | 66 K |
| IDT71V256SB20Y | 3.3V CMOS fast SRAM with 2.5V compatible inputs 256K (32K x 8-bit) | Integrated-Device-Technology-Inc- | SOJ | 28 | 0°C | 70°C | 66 K |
| MSM54V25632A-10AGBK4 | 131,072-word x 32-bit x 2-bank synchronous graphics RAM | distributor | QFP | 100 | 0°C | 70°C | 864 K |
| MSM54V25632A-12AGBK4 | 131,072-word x 32-bit x 2-bank synchronous graphics RAM | distributor | QFP | 100 | 0°C | 70°C | 864 K |
| MTV25N50E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 280 K |
| MTV25N50E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 280 K |
| << [10] [11] [12] [13] [14] 15 [16] [17] [18] [19] [20] >> |
|---|
