| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416V254DJ-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJL-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJL-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DT-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416V254DT-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416V254DT-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| RBV2500D | 50 V, 25 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 19 K |
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