Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HM62V256LFP-10T | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | distributor | SOP | 28 | 0°C | 70°C | 111 K |
HM62V256LFP-8ULT | 32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns | distributor | SOP | 28 | 0°C | 70°C | 111 K |
HM62V256LT-10 | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | distributor | TSOP | 32 | 0°C | 70°C | 111 K |
HM62V256LT-8SL | 32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns | distributor | TSOP | 32 | 0°C | 70°C | 111 K |
HM62V256LTM-10 | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | distributor | TSOP | 28 | 0°C | 70°C | 111 K |
HM62V256LTM-10SL | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | distributor | TSOP | 28 | 0°C | 70°C | 111 K |
HM62V256LTM-8UL | 32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns | distributor | TSOP | 28 | 0°C | 70°C | 111 K |
KM416V254DTL-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
KM416V254DTL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
KM416V254DTL-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
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